Device Delay in GaN Transistors Under High Drain Bias...

IEEE Electron Device Letters 2013 / 07 Vol. 34; Iss. 7

Device Delay in GaN Transistors Under High Drain Bias Conditions

Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2262034
Date:
July, 2013
File:
PDF, 306 KB
english, 2013
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