[IEEE 2004 IEEE International Reliability Physics Symposium. - Phoenix, AZ, USA (25-29 April 2004)] 2004 IEEE International Reliability Physics Symposium. Proceedings - The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology
Voldman, S., Lanzerotti, L., Morris, W., Rubin, L.Year:
2004
Language:
english
DOI:
10.1109/RELPHY.2004.1315315
File:
PDF, 643 KB
english, 2004