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On the compensation mechanism in high-resistivity 6HâSiC doped with vanadium
Jenny, J. R., Skowronski, M., Mitchel, W. C., Hobgood, H. M., Glass, R. C., Augustine, G., Hopkins, R. H.Volume:
78
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.359899
File:
PDF, 713 KB
english, 1995