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Epitaxial Lateral Overgrowth of GaN on Sapphire – An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography
P.J. McNally, T. Tuomi, D. Lowney, K. Jacobs, A.N. Danilewsky, R. Rantamäki, M. O'Hare, L. ConsidineVolume:
185
Year:
2001
Language:
english
Pages:
10
DOI:
10.1002/1521-396x(200106)185:23.0.co;2-h
File:
PDF, 229 KB
english, 2001