SPIE Proceedings [SPIE Optoelectronics '99 - Integrated Optoelectronic Devices - San Jose, CA (Saturday 23 January 1999)] Physics and Simulation of Optoelectronic Devices VII - Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment
Hybertsen, Mark S., Alam, Muhammad A., Shtengel, Gleb E., Belenky, Gregory L., Reynolds, Jr., C. L., Donetsky, Dmitri V., Smith, R. Kent, Baraff, Gene A., Kazarinov, Rudolf F., Wynn, James D., Smith,Volume:
3625
Year:
1999
Language:
english
DOI:
10.1117/12.356912
File:
PDF, 591 KB
english, 1999