Effects of different insertion layer thicknesses on...

Semiconductor Science and Technology 2005 / 12 Vol. 20; Iss. 12

Effects of different insertion layer thicknesses on structural and optical properties of GaN/Al 0.5 Ga 0.5 N/GaN coupled multiquantum wells

Park, Y S, Park, C M, Im, Hyunsik, Kang, T W, Oh, Jae-Eung
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Volume:
20
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/20/12/L01
Date:
December, 2005
File:
PDF, 345 KB
english, 2005
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