![](/img/cover-not-exists.png)
[IEEE 3rd International Symposium on Power Semiconductor Devices and ICs - Baltimore, MD, USA (22-24 April 1991)] [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - Realization of high breakdown voltage (<700 V) in thin SOI devices
Merchant, S., Arnold, E., Baumgart, H., Mukherjee, S., Pein, H., Pinker, R.Year:
1991
Language:
english
DOI:
10.1109/ISPSD.1991.146060
File:
PDF, 453 KB
english, 1991