7.5 kW/mm2 current switch using AlGaN/GaN...

Electronics Letters 2000 Vol. 36; Iss. 24

7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

Simin, G., Hu, X., Ilinskaya, N., Kumar, A., Koudymov, A., Zhang, J., Asif Khan, M., Gaska, R., Shur, M.S.
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Volume:
36
Year:
2000
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20001401
File:
PDF, 230 KB
english, 2000
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