Molecular Beam Epitaxy of Group-III Nitrides on Silicon...

Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

F. Semond, Y. Cordier, N. Grandjean, F. Natali, B. Damilano, S. Vézian, J. Massies
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Volume:
188
Year:
2001
Language:
english
Pages:
10
DOI:
10.1002/1521-396x(200112)188:23.0.co;2-6
File:
PDF, 197 KB
english, 2001
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