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Characterization of annealed high-dose oxygen-implanted silicon by spectroscopic ellipsometry and reflectometry
Jans, J. C., Hollering, R. W. J., Lifka, H.Volume:
70
Year:
1991
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.349835
File:
PDF, 807 KB
english, 1991