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Quantum Size and Doping Concentration Effects on the Current-Voltage Characteristics in GaN Resonant Tunneling Diodes
Dakhlaoui, HassenVolume:
30
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/30/7/077304
Date:
July, 2013
File:
PDF, 520 KB
english, 2013