Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers
D. Huang, P. Visconti, M.A. Reshchikov, F. Yun, T. King, A.A. Baski, C.W. Litton, J. Jasinski, Z. Liliental-Weber, H. MorkoçVolume:
188
Year:
2001
Language:
english
Pages:
4
DOI:
10.1002/1521-396x(200112)188:23.0.co;2-f
File:
PDF, 115 KB
english, 2001