Influence of the Germanium content on the amorphization of...

Materials Science in Semiconductor Processing 2013 / 12 Vol. 16; Iss. 6

Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation

Belafhaili, A., Laânab, L., Cristiano, F., Cherkashin, N., Claverie, A.
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Volume:
16
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2013.04.014
Date:
December, 2013
File:
PDF, 561 KB
english, 2013
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