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Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs
Tan, Fei, An, Xia, Xue, Shoubin, Huang, Liangxi, Wu, Weikang, Zhang, Xing, Huang, RuVolume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/5/055003
Date:
May, 2013
File:
PDF, 413 KB
english, 2013