Novel Method for Fabrication of Tri-Gated Poly-Si Nanowire...

IEEE Electron Device Letters 2013 / 06 Vol. 34; Iss. 6

Novel Method for Fabrication of Tri-Gated Poly-Si Nanowire Field-Effect Transistors With Sublithographic Channel Dimensions

Lee, Ko-Hui, Lin, Horng-Chih, Huang, Tiao-Yuan
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2256771
Date:
June, 2013
File:
PDF, 456 KB
english, 2013
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