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Free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon–plasmon coupling regime
Shkerdin, G, Rabbaa, S, Stiens, J, Vounckx, RVolume:
45
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/45/49/495103
Date:
December, 2012
File:
PDF, 283 KB
english, 2012