Improvement of quality and strain relaxation of GaN...

Journal of Materials Science: Materials in Electronics 2013 / 08 Vol. 24; Iss. 8

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNxinterlayer

Shiwei Song, Yang Liu, Hongwei Liang…
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Volume:
24
Language:
english
DOI:
10.1007/s10854-013-1192-4
Date:
August, 2013
File:
PDF, 337 KB
english, 2013
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