Nature of the filament formed in HfO2-based resistive...

Thin Solid Films 2013 / 4 Vol. 533

Nature of the filament formed in HfO2-based resistive random access memory

De Stefano, Francesca, Houssa, Michel, Afanas'ev, Valeri V., Kittl, Jorge A., Jurczak, Małgorzata, Stesmans, Andre
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Volume:
533
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2012.12.097
Date:
April, 2013
File:
PDF, 455 KB
english, 2013
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