High-pressure effects in the layered semiconductor...

Physical Review B 1995 / 6 Vol. 51; Iss. 23

High-pressure effects in the layered semiconductor germanium selenide

Hsueh, H. C., Vass, H., Clark, S. J., Ackland, G. J., Crain, J.
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Volume:
51
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.51.16750
Date:
June, 1995
File:
PDF, 875 KB
english, 1995
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