The enhancement of unipolar resistive switching behavior...

Solid-State Electronics 2013 / 11 Vol. 89

The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM

Zhao, Hongbin, Tu, Hailing, Wei, Feng, Zhang, Xinqiang, Xiong, Yuhua, Du, Jun
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Volume:
89
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2013.06.011
Date:
November, 2013
File:
PDF, 1.45 MB
english, 2013
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