Electrical properties of La[sub 2]O[sub 3] and HfO[sub...

Journal of Applied Physics 2008 Vol. 103; Iss. 1

Electrical properties of La[sub 2]O[sub 3] and HfO[sub 2]∕La[sub 2]O[sub 3] gate dielectrics for germanium metal-oxide-semiconductor devices

Mavrou, G., Galata, S., Tsipas, P., Sotiropoulos, A., Panayiotatos, Y., Dimoulas, A., Evangelou, E. K., Seo, J. W., Dieker, Ch.
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Volume:
103
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2827499
File:
PDF, 1.22 MB
english, 2008
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