Influence of contact shape on AlGaN/GaN Schottky diode...

Applied Physics A: Materials Science & Processing 2013 / 09 Vol. 112; Iss. 4

Influence of contact shape on AlGaN/GaN Schottky diode prepared on Si with thick buffer layer

Manoj Kumar, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara
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Volume:
112
Language:
english
DOI:
10.1007/s00339-013-7769-1
Date:
September, 2013
File:
PDF, 612 KB
english, 2013
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