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The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensation
A.J.R. de Kock, P.J. Roksnoer, P.G.T. BoonenVolume:
30
Year:
1975
Language:
english
Pages:
16
DOI:
10.1016/0022-0248(75)90001-9
File:
PDF, 2.39 MB
english, 1975