Effect of surface passivation by SiN/SiO2of AlGaN/GaN...

Semiconductors 2013 / 07 Vol. 47; Iss. 7

Effect of surface passivation by SiN/SiO2of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

Gassoumi, Malek, Mosbahi, Hana, Zaidi, Mohamed Ali, Gaquiere, Christophe, Maaref, Hassen
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Volume:
47
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613070087
Date:
July, 2013
File:
PDF, 212 KB
english, 2013
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