Direct observation of defects in Si-doped and Ge-doped...

Journal of Crystal Growth 1977 Vol. 38; Iss. 1

Direct observation of defects in Si-doped and Ge-doped Ga0.9Al0.1As epitaxial layers by transmission electron microscopy

Tsuyoshi Kotani, Osamu Ueda, Kenzo Akita, Yorimitsu Nishitani, Toshihiro Kusunoki, Osamu Ryuzan
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Volume:
38
Year:
1977
Language:
english
Pages:
8
DOI:
10.1016/0022-0248(77)90377-3
File:
PDF, 2.48 MB
english, 1977
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