Characterization of silicon layers epitaxially grown on...

Journal of Crystal Growth 1978 Vol. 45; Iss. none

Characterization of silicon layers epitaxially grown on metallurgical-grade polycrystalline substrates

Haruo Itoh, Tadashi Saitoh, Nobuo Nakamura, Sunao Matsubara, Terunori Warabisako, Takashi Tokuyama
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Volume:
45
Year:
1978
Language:
english
Pages:
8
DOI:
10.1016/0022-0248(78)90474-8
File:
PDF, 943 KB
english, 1978
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