Te-doped InP and InGaAs prepared by vapor phase epitaxy for photodetectors
Nobuhiko Susa, Yoshiharu Yamauchi, Hiroaki Ando, Hiroshi KanbeVolume:
58
Year:
1982
Language:
english
Pages:
7
DOI:
10.1016/0022-0248(82)90139-7
File:
PDF, 540 KB
english, 1982