Transition from the two- to three-dimensional growth of Ge...

Semiconductors 2013 / 03 Vol. 47; Iss. 3

Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

M. V. Shaleev, A. V. Novikov, D. V. Yurasov, J. M. Hartmann…
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Volume:
47
Language:
english
DOI:
10.1134/S106378261303024X
Date:
March, 2013
File:
PDF, 337 KB
english, 2013
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