Electrically active centers formed in silicon during the...

Semiconductors 2013 / 02 Vol. 47; Iss. 2

Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum

N. A. Sobolev, A. S. Loshachenko, D. S. Poloskin, E. I. Shek
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Volume:
47
Language:
english
DOI:
10.1134/S106378261302019X
Date:
February, 2013
File:
PDF, 151 KB
english, 2013
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