Properties of epitaxial (AlxGa1 −xAs)1 −yCyalloys grown by...

Semiconductors 2013 / 01 Vol. 47; Iss. 1

Properties of epitaxial (AlxGa1 −xAs)1 −yCyalloys grown by MOCVD autoepitaxy

P. V. Seredin, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov…
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Volume:
47
Language:
english
DOI:
10.1134/S1063782613010211
Date:
January, 2013
File:
PDF, 217 KB
english, 2013
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