A novel high voltage lateral double diffused metal oxide...

Materials Science in Semiconductor Processing 2013 / 12 Vol. 16; Iss. 6

A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shaped buried oxide feature

Mehrad, Mahsa, Orouji, Ali A.
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Volume:
16
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2013.07.012
Date:
December, 2013
File:
PDF, 723 KB
english, 2013
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