Energy characteristics of boron impurity in Si∕Si[sub...

Low Temperature Physics 2007 Vol. 33; Iss. 10

Energy characteristics of boron impurity in Si∕Si[sub 1−x]Ge[sub x] heterostructures with on-center and on-edge selective doping of quantum wells

Vainberg, V. V., Gudenko, Yu. N., Poroshin, V. N., Tulupenko, V. N., Cheng, N. N., Yang, Z. P., Mashanov, V., Wang, K. Y.
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Volume:
33
Year:
2007
Language:
english
Journal:
Low Temperature Physics
DOI:
10.1063/1.2746865
File:
PDF, 390 KB
english, 2007
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