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[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT)
Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y., Saraswat, K.C.Year:
2005
Language:
english
DOI:
10.1109/.2005.1469221
File:
PDF, 1.15 MB
english, 2005