Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAs
Cho, A. Y., Dernier, P. D.Volume:
49
Year:
1978
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.325286
File:
PDF, 623 KB
english, 1978