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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization
Yu, Shimeng, Ximeng Guan,, Wong, H.-S. PhilipYear:
2011
Language:
english
DOI:
10.1109/IEDM.2011.6131572
File:
PDF, 1.11 MB
english, 2011