An analysis of the mobility of holes in p-type SiGe quantum...

Semiconductor Science and Technology 1999 / 03 Vol. 14; Iss. 3

An analysis of the mobility of holes in p-type SiGe quantum wells using multiple scattering theory

Kearney, M J, Horrell, A I
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Volume:
14
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/14/3/001
Date:
March, 1999
File:
PDF, 106 KB
english, 1999
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