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Epitaxial growth of InP on Si by OMVPE — defect reduction in epitaxial InP using InAsxP1−xInP superlattices
A. Seki, F. Konushi, J. Kudo, M. KobaVolume:
93
Year:
1988
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(88)90578-7
File:
PDF, 884 KB
english, 1988