Lattice defect in selective epitaxial silicon and laterally...

Journal of Crystal Growth 1989 Vol. 98; Iss. 3

Lattice defect in selective epitaxial silicon and laterally overgrown regions on SiO2

Hiroshi Kitajima, Yuki Fujimoto, Naoki Kasai, Akihiko Ishitani, Nobuhiro Endo
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Volume:
98
Year:
1989
Language:
english
Pages:
13
DOI:
10.1016/0022-0248(89)90141-3
File:
PDF, 2.14 MB
english, 1989
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