Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT...

IEEE Transactions on Microwave Theory and Techniques 2009 / 12 Vol. 57; Iss. 12

Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers

Shih-En Shih,, Deal, W.R., Yamauchi, D.M., Sutton, W.E., Wen-Ben Luo,, Yaochung Chen,, Smorchkova, I.P., Heying, B., Wojtowicz, M., Siddiqui, M.
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Volume:
57
Language:
english
Journal:
IEEE Transactions on Microwave Theory and Techniques
DOI:
10.1109/TMTT.2009.2034416
Date:
December, 2009
File:
PDF, 1.59 MB
english, 2009
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