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Low-temperature heteroepitaxial growth of Si on Sapphire by disilane gas-source molecular beam epitaxy
Kazuaki Sawada, Makoto Ishida, Kiyoteru Hayama, Tetsuro Nakamura, Tetso SuzakiVolume:
97
Year:
1989
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(89)90557-5
File:
PDF, 429 KB
english, 1989