Programmable metallization cells based on amorphous La0.79Sr0.21MnO3 thin films for memory applications
Liu, Dongqing, Wang, Nannan, Wang, Guang, Shao, Zhengzheng, Zhu, Xuan, Zhang, Chaoyang, Cheng, HaifengVolume:
580
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2013.06.095
Date:
December, 2013
File:
PDF, 1.07 MB
english, 2013