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[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Investigation of monotonous increase in saturation-region drain current during hot carrier stress in N-type Lateral Diffused MOSFET with STI
Yu-Hui Huang,, Shih, J.R., Lee, Y.H., Sunnys Hsieh,, Liu, C.C., Wu, Kenneth, Chou, H.L.Year:
2010
Language:
english
DOI:
10.1109/IRPS.2010.5488832
File:
PDF, 472 KB
english, 2010