GaxIn1−xP/GaAs grown by gas source molecular beam epitaxy using phosphine
Akira Takamori, Tatsuo Yokotsuka, Kiyoshi Uchiyama, Masato NakajimaVolume:
108
Year:
1991
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(91)90357-b
File:
PDF, 817 KB
english, 1991