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Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN
Noriyuki Kuwano, Tadayoshi Shiraishi, Akihiro Koga, Kensuke Oki, Kazumasa Hiramatsu, Hiroshi Amano, Kenji Itoh, Isamu AkasakiVolume:
115
Year:
1991
Language:
english
Pages:
7
DOI:
10.1016/0022-0248(91)90772-w
File:
PDF, 711 KB
english, 1991