Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate...

Journal of Crystal Growth 1991 Vol. 115; Iss. 1-4

Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy

Hiroshi Murakami, Tsunemori Asahi, Hiroshi Amano, Kazumasa Hiramatsu, Nobuhiko Sawaki, Isamu Akasaki
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Volume:
115
Year:
1991
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(91)90820-u
File:
PDF, 444 KB
english, 1991
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