TEM analysis of voids in UHV-deposited amorphous Si layers...

Journal of Crystal Growth 1992 Vol. 118; Iss. 1-2

TEM analysis of voids in UHV-deposited amorphous Si layers used for lateral solid phase epitaxial growth

M.J.J. Theunissen, J.M.L. van Rooij-Mulder, C.W.T. Bulle-Lieuwma, D.E.W. Vandenhoudt, D.J. Gravesteijn, G.F.A. van de Walle
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Volume:
118
Year:
1992
Language:
english
Pages:
10
DOI:
10.1016/0022-0248(92)90057-p
File:
PDF, 1.22 MB
english, 1992
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