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[IEEE 2012 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2012.10.14-2012.10.18)] 2012 IEEE International Integrated Reliability Workshop Final Report - Physical modeling of voltage-driven resistive switching in oxide RRAM
Ielmini, Daniele, Larentis, Stefano, Balatti, SimoneYear:
2012
Language:
english
DOI:
10.1109/IIRW.2012.6468905
File:
PDF, 1007 KB
english, 2012