Growth of InP in chemical beam epitaxy with high purity...

Growth of InP in chemical beam epitaxy with high purity tertiarybutylphosphine

G. Hincelin, M. Zahzouh, R. Mellet, A.M. Pougnet
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Volume:
120
Year:
1992
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(92)90374-r
File:
PDF, 327 KB
english, 1992
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