Characterization of extended defects in highly Te-doped 〈111〉 GaSb single crystals grown by the Czochralski technique
J. Doerschel, U. GeisslerVolume:
121
Year:
1992
Language:
english
Pages:
9
DOI:
10.1016/0022-0248(92)90586-8
File:
PDF, 1.44 MB
english, 1992