Method using reflection high-energy electron diffraction intensity to determine the solid solubility limit for boron in silicon and Si1−xGex layers
Mats I. Larsson, Göran V. HanssonVolume:
134
Year:
1993
Language:
english
Pages:
8
DOI:
10.1016/0022-0248(93)90127-i
File:
PDF, 705 KB
english, 1993